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inchange semiconductor product specification silicon pnp power transistors 2SB863 description ? ? with to-3p(i) package ? complement to type 2sd1148 applications ? power amplifier applications ? recommend for 70w high fidelity audio frequency amplifier output stage pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -140 v v ceo collector-emitter voltage open base -140 v v ebo emitter-base voltage open collector -5 v i c collector current -10 a i b base current -1 a p c collector power dissipation t c =25 ?? 100 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon pnp power transistors 2SB863 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma; i b =0 -140 v v cesat collector-emitter saturation voltage i c =-5.0a ;i b =-0.5a -0.60 -2.0 v v be base-emitter on voltage i c =-5a ; v ce =-5v -0.96 -1.5 v i cbo collector cut-off current v cb =-140v; i e =0 -5.0 | a i ebo emitter cut-off current v eb =-5v; i c =0 -5.0 | a h fe-1 dc current gain i c =-1a ; v ce =-5v 55 160 h fe-2 dc current gain i c =-5a ; v ce =-5v 25 f t transition frequency i c =-1a ; v ce =-10v 15 mhz c ob collector output capacitance i c =0;f=1mhz ; v cb =-10v 400 pf ? h fe-1 classifications r o 55-110 80-160
inchange semiconductor product specification 3 silicon pnp power transistors 2SB863 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm)
inchange semiconductor product specification 4 silicon pnp power transistors 2SB863

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